Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment

Introduction. Adequate modeling of semiconductor devices with a p–n -junction in reverse bias represents relevant research problem. The existing quasistatic and non-quasistatic models fail to provide satisfactory description for the dependence nonequilibrium charge carrier lifetime on current density. This leads significant simulation errors (tens percent) at pulsed broadband signals. Simulation arise, because regard as constant value. Aim. To propose investigate an equivalent circuit considering carriers direct current, possibility its simple integration into CAD. Materials methods . study was carried out example fast recovery silicon diode BAS16J p–n- junction manufactured by Nexperia. A modified model is proposed form that considers high injection levels. Results. discrepancy between experimental simulated curves did not exceed ±9 % under operation. extraction parameters conventionally, from current-voltage capacitance-voltage characteristics diode. Conclusion. can be used when designing radio electronic operated short-pulse easily implemented modern CAD systems user level.